SA482P67K65 datasheet(2/6 Pages) SILAN

No de pièce	SA482P67K65

Description	PWM CONTROLLER WITH BUILTIN MOSFET

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Fabricant	SILAN [Silan Microelectronics Joint-stock]

Site Internet	http://www.silan.com.cn

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2 / 6 page

SA482X67K65

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

REV:1.4

2007.07.05

Http: www.silan.com.cn

Page 2 of 7

BLOCK DIAGRAM

ABSOLUTE MAXIMUM RATING

Characteristics

Symbol

Rating

Unit

Drain-Gate Voltage (RGS=1M

Ω)

VDGR

650

V

Gate-Power (GND) Voltage

VGS

±30

V

Drain Current Pulsed

IDM

8.0

ADC

Continuous Drain Current (Tamb=25

°C)

ID

2.0

ADC

Continuous Drain Current (Tamb=100

°C)

ID

1.3

ADC

Signal Pulsed Avalanche Energy

(2)

EAS

68

mJ

Power Supply Voltage

VCC

30

V

Analog Input Voltage

VFB

-0.3~ VSD

V

SA482P67K65

2.2

SA482T67K65

PD

42

W

SA482P67K65

0.017

Total Power Consumption

SA482T67K65

Darting

0.33

W/

°C

Operating Junction Temperature

TJ

+160

°C

Operating Temperature

Tamb

-25~ +85

°C

Storage Temperature

Tstg

-55~+150

°C

Note: 1. Pulse width is limited by maximum junction temperature.

2. L=51mH, starting Tj=25

°C

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