BAS21SW datasheet(4/11 Pages) NXP

No de pièce	BAS21SW

Description	High-voltage switching diodes

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Fabricant	NXP [NXP Semiconductors]

Site Internet	http://www.nxp.com

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4 / 11 page

BAS21W_SER_1

Product data sheet

Rev. 01 — 9 October 2009

4 of 11

NXP Semiconductors

BAS21W series

High-voltage switching diodes

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

7.

Characteristics

[1]

When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.

Table 7.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per device

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1] -

-

625

K/W

Rth(j-sp)

thermal resistance from

junction to solder point

-

300

K/W

Table 8.

Characteristics

Tamb =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

VF

forward voltage

IF = 100 mA

-

1.0

V

IF = 200 mA

-

1.25

V

IR

reverse current

VR = 200 V

-

100

nA

VR = 200 V; Tj = 150 °C

-

100

µA

Cd

diode capacitance

f = 1 MHz; VR =0V

-

2

pF

trr

reverse recovery time

[1] --50

ns

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