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TPCC8103 Fiches technique(PDF) 2 Page - Toshiba Semiconductor |
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TPCC8103 Fiches technique(HTML) 2 Page - Toshiba Semiconductor |
2 / 7 page TPCC8103 2009-07-15 2 Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case (Tc = 25℃) Rth (ch-c) 4.7 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Rth (ch-a) 66 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 180 °C/W Marking (Note 5) Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) Note 3: VDD = −24 V, Tch = 25°C (initial), L = 200 μH, RG = 25 Ω, IAR = −18 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the year) (a) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) Part number 8 103 ※ Lot No. Product-specific code |
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