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TPCC8103 Fiches technique(PDF) 2 Page - Toshiba Semiconductor

No de pièce TPCC8103
Description  Field Effect Transistor Silicon P-Channel MOS Type (U-MOS??
Download  7 Pages
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCC8103 Fiches technique(HTML) 2 Page - Toshiba Semiconductor

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TPCC8103
2009-07-15
2
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
(Tc = 25℃)
Rth (ch-c)
4.7
°C/W
Thermal resistance, channel to ambient
(t
= 10 s)
(Note 2a)
Rth (ch-a)
66
°C/W
Thermal resistance, channel to ambient
(t
= 10 s)
(Note 2b)
Rth (ch-a)
180
°C/W
Marking (Note 5)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
Note 3: VDD = −24 V, Tch = 25°C (initial), L = 200 μH, RG = 25 Ω, IAR = −18 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: * Weekly code: (Three digits)
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the year)
(a)
FR-4
25.4
× 25.4 × 0.8
(Unit: mm)
(b)
FR-4
25.4
× 25.4 × 0.8
(Unit: mm)
Part number
8 103
Lot No.
Product-specific code


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