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TPC8121 Fiches technique(PDF) 2 Page - Toshiba Semiconductor

No de pièce TPC8121
Description  Field Effect Transistor Silicon P Channel MOS Type (U-MOS V)
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPC8121 Fiches technique(HTML) 2 Page - Toshiba Semiconductor

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TPC8121
2009-09-29
2
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient
(t
= 10 s)
(Note 2a)
Rth (ch-a)
65.8
°C/W
Thermal resistance, channel to ambient
(t
= 10 s)
(Note 2b)
Rth (ch-a)
125
°C/W
Marking (Note 5)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
Note 3: VDD = −24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = −11 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5:
• on the lower left of the marking indicates Pin 1.
Note 6: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
* Weekly code: (Three digits)
Week of manufacture
(01 for first week of year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
(b)
FR-4
25.4
× 25.4 × 0.8
(unit: mm)
(a)
FR-4
25.4
× 25.4 × 0.8
(unit: mm)
T P C 812 1
Lot No.
(weekly code)
Note 6
Part No. (or abbreviation code)


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