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TPC8119 Fiches technique(PDF) 6 Page - Toshiba Semiconductor

No de pièce TPC8119
Description  Field Effect Transistor Silicon P Channel MOS Type (U-MOSV)
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPC8119 Fiches technique(HTML) 6 Page - Toshiba Semiconductor

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TPC8119
2009-09-29
6
t = 10 ms *
1 ms *
VDSS max
−0.1
−1
−10
−100
−0.1
−1
−10
−100
0.1
0.001
0.01
0.1
1
10
100
1000
10
100
1000
(2)
(1)
1
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
rth − tw
Single-pulse
Pulse width tw (s)
Drain
−source voltage VDS (V)
Safe operating area
ID max (Pulse) *
* Single-pulse
Ta
= 25°C
Curves must be derated
linearly with increase in
temperature.


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