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TPC8041 Fiches technique(PDF) 5 Page - Toshiba Semiconductor |
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TPC8041 Fiches technique(HTML) 5 Page - Toshiba Semiconductor |
5 / 7 page TPC8041 2009-09-29 5 80 160 120 VDS =24 V VDD =24 V 12 0 30 16 20 0 10 20 40 8 10 20 6 0 30 50 12 4 50 40 12 6 (1) (2) 0 0.4 0.8 1.2 0 40 80 160 120 1.6 2 −80 −40 0 40 0 2 0.5 1 1.5 2.5 3 Ciss Coss Crss 1000 10000 10 0.1 1 10 100 100 10 4.5 3 VGS = 0 V 1 0 −0.2 −0.4 −0.6 −0.8 100 −1 0.1 10 −1.2 1 VGS = 4.5 V 0 4 8 12 20 −80 −40 0 40 80 120 160 VGS = 10 V 16 ID = 6.5 A ID = 3, 6.5, 13 A 3 13 RDS (ON) – Ta IDR – VDS Vth – Ta Common source Pulse test Common source Ta = 25°C Pulse test Common source VGS = 0 V f = 1 MHz Ta = 25°C Common source VDS = 10 V ID = 1mA Pulse test Common source ID = 13 A Ta = 25°C Pulse test Ambient temperature Ta (°C) Drain −source voltage VDS (V) Drain −source voltage VDS (V) Capacitance – VDS Ambient temperature Ta (°C) Total gate charge Qg (nC) Dynamic input/output characteristics PD – Ta Ambient temperature Ta (°C) (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10 s |
Numéro de pièce similaire - TPC8041 |
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Description similaire - TPC8041 |
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