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TPC6501 Fiches technique(PDF) 2 Page - Toshiba Semiconductor

No de pièce TPC6501
Description  Transistor Silicon NPN Epitaxial Type
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPC6501 Fiches technique(HTML) 2 Page - Toshiba Semiconductor

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TPC6501
2006-11-10
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 20 V, IE = 0
100
nA
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0
100
nA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
10
V
hFE (1)
VCE = 2 V, IC = 0.2 A
400
1000
DC current gain
hFE (2)
VCE = 2 V, IC = 0.6 A
200
Collector-emitter saturation voltage
VCE (sat)
IC = 0.6 A, IB = 12 mA
0.12
V
Base-emitter saturation voltage
VBE (sat)
IC = 0.6 A, IB = 12 mA
1.10
V
Rise time
tr
60
Storage time
tstg
215
Switching time
Fall time
tf
See Figure 1 circuit diagram.
VCC ∼− 6 V, RL = 10 Ω
IB1 = −IB2 = 12 mA
25
ns
Figure 1 Switching Time Test Circuit & Timing Chart
Circuit Configuration
Marking
6
1
2
3
5
4
IB2
IB1
20
μs
Output
Input
IB2
IB1
VCC
Duty cycle
< 1%
Part No.
(or abbreviation code)
H2A
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Lot code (month)
Lot No.
Pin #1
Lot code
(year)
Product-specific code


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