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TPC6501 Fiches technique(PDF) 2 Page - Toshiba Semiconductor |
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TPC6501 Fiches technique(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page TPC6501 2006-11-10 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 20 V, IE = 0 ⎯ ⎯ 100 nA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ⎯ ⎯ 100 nA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 10 ⎯ ⎯ V hFE (1) VCE = 2 V, IC = 0.2 A 400 ⎯ 1000 DC current gain hFE (2) VCE = 2 V, IC = 0.6 A 200 ⎯ ⎯ Collector-emitter saturation voltage VCE (sat) IC = 0.6 A, IB = 12 mA ⎯ ⎯ 0.12 V Base-emitter saturation voltage VBE (sat) IC = 0.6 A, IB = 12 mA ⎯ ⎯ 1.10 V Rise time tr ⎯ 60 ⎯ Storage time tstg ⎯ 215 ⎯ Switching time Fall time tf See Figure 1 circuit diagram. VCC ∼− 6 V, RL = 10 Ω IB1 = −IB2 = 12 mA ⎯ 25 ⎯ ns Figure 1 Switching Time Test Circuit & Timing Chart Circuit Configuration Marking 6 1 2 3 5 4 IB2 IB1 20 μs Output Input IB2 IB1 VCC Duty cycle < 1% Part No. (or abbreviation code) H2A A line indicates lead (Pb)-free package or lead (Pb)-free finish. Lot code (month) Lot No. Pin #1 Lot code (year) Product-specific code |
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