ST3406

N Channel Enhancement Mode MOSFET

5.4A

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

http://www.stansontech.com

DESCRIPTION

ST3406 is the N-Channel logic enhancement mode power field effect transistor which is

produced using high cell density, DMOS trench technology. This high density process is

especially tailored to minimize on-state resistance. These devices are particularly

suited for low voltage application such as cellular phone and notebook computer power

management, other battery powered circuits, and low in-line power loss are required.

The product is in a very small outline surface mount package.

FEATURE

PIN CONFIGURATION

SOT-23-3L

ST3406 2006. V1

3

1

1.Gate

2.Source

3.Drain

PART MARKING

SOT-23-3L

Y: Year Code

A: Week Code

ORDERING INFORMATION

Part Number

Package

Part Marking

ST3406S23RG

SOT-23-3L

A6YA

※

Week Code Code : A ~ Z(1~26) ; a ~ z(27~52)

※

ST3406S23RG

S23 : SOT-23-3L ; R : Tape Reel ; G : Pb – Free

Super high density cell design for

Exceptional on-resistance and maximum

DC current capability

SOT-23-3L package design

D

G

S

2

3

1

A6YA

2