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FAN5358S713X Fiches technique(PDF) 4 Page - Fairchild Semiconductor |
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FAN5358S713X Fiches technique(HTML) 4 Page - Fairchild Semiconductor |
4 / 13 page © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FAN5358 • Rev. 1.0.1 4 Electrical Characteristics Minimum and maximum values are at VIN = 2.7V to 5.5V, TA = -40°C to +85°C, circuit of Figure 1 unless otherwise noted. Typical values are at TA = 25°C, VIN =3.6V. Symbol Parameter Conditions Min. Typ. Max. Units Power Supplies IQ Quiescent Current No Load, EN=VIN 25 48 µA I(SD) Shutdown Supply Current EN = GND 0.05 1.00 µA VUVLO Under-Voltage Lockout Threshold Rising VIN 2.4 2.6 V VUVHYST Under-Voltage Lockout Hysteresis 225 mV V(ENH) Enable HIGH-Level Input Voltage 1.2 V V(ENL) Enable LOW-Level Input Voltage 0.4 V I(EN) Enable Input Leakage Current EN = VIN or GND 0.01 1.00 µA Oscillator fOSC Switching Frequency In PWM Mode 2 MHz Regulation VO Output Voltage Accuracy 1.0V ILOAD = 0 to 500mA -4.5 +4.5 % 1.2V ILOAD = 0 to 500mA -4.5 +4.5 1.3V ILOAD = 0 to 500mA -4.5 +4.5 1.8V ILOAD = 0 to 500mA -4.0 +4.0 tSS Soft-Start From EN Rising Edge 70 µs Output Driver RDS(on) PMOS On Resistance VIN = VGS = 3.6V 750 m Ω NMOS On Resistance VIN = VGS = 3.6V 650 m Ω ILIM PMOS Peak Current Limit Open-Loop (1) 750 850 1150 mA TTSD Thermal Shutdown 150 °C THYS Thermal Shutdown Hysteresis 20 °C Note: 5. The Electrical Characteristics table reflects open-loop data. Refer to Operation Description and Typical Characteristic for closed-loop data. Block Diagram Q2 Q1 SW VIN GND VOUT L1 CIN LOGIC & GATE DRIVE U1 RAMP GEN REF EN COUT VOUT GND Figure 3. IC Block Diagram |
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