UF2815B datasheet(1/3 Pages) MA-COM

No de pièce	UF2815B

Description	RF Power MOSFET Transistor 15W, 100-500 MHz, 28V

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Fabricant	MA-COM [M/A-COM Technology Solutions, Inc.]

Site Internet	http://www.macomtech.com

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RF Power MOSFET Transistor

15W, 100-500 MHz, 28V

M/A-COM Products

Released - Ver 08.07

UF2815B

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Features

• N-Channel enhancement mode device

• DMOS structure

• Lower capacitances for broadband operation

• Common source configuration

• Lower noise floor

• RoHS Compliant

• 100 MHz to 500 MHz operation

ABSOLUTE MAXIMUM RATINGS AT 25° C

Parameter

Rating

Drain-Source Voltage

65

Gate-Source Voltage

20

Drain-Source Current

4.2

Power Dissipation

48.6

Junction Temperature

200

Storage Temperature

-55 to 150

Thermal Resistance

3.6

Symbol

VDS

VGS

IDS

PD

TJ

TSTG

θJC

Units

V

A

W

°C

°C/W

ELECTRICAL CHARACTERISTICS AT 25°C

Parameter

Symbol

Min

Max

Units

Test Conditions

Drain-Source Breakdown Voltage

BVDSS

65

-

V

VGS = 0.0 V , IDS = 6.0 mA

Drain-Source Leakage Current

IDSS

-

3.0

mA

VGS = 28.0 V , VGS = 0.0 V

Gate-Source Leakage Current

IGSS

-

3.0

µA

VGS = 20.0 V , VDS = 0.0 V

Gate Threshold Voltage

VGS(TH)

2.0

6.0

V

VDS = 10.0 V , IDS = 30.0 mA

Forward Transconductance

GM

.240

-

S

VDS = 10.0 V , IDS 300.0 mA , Δ VGS = 1.0V, 80 μs Pulse

Input Capacitance

CISS

-

21

pF

VDS = 28.0 V , F = 1.0 MHz

Output Capacitance

COSS

-

15

pF

VDS = 28.0 V , F = 1.0 MHz

Reverse Capacitance

CRSS

-

7.2

pF

VDS = 28.0 V , F = 1.0 MHz

Power Gain

GP

10

-

dB

VDD = 28.0 V, IDQ = 150.0 mA, POUT = 15.0 W F =500 MHz

Drain Efficiency

ŋD

50

-

%

VDD = 28.0 V, IDQ = 150.0 mA, POUT = 15.0 W F =500 MHz

Load Mismatch Tolerance

VSWR-T

-

20:1

-

VDD = 28.0 V, IDQ = 150.0 mA, POUT = 15.0 W F =500 MHz

F (MHz)

ZIN (Ω)

ZLOAD (Ω)

100

6.4-j25.0

22.0+j16.0

300

6.5-j12.0

15.0+j14.0

500

1.7-j10.5

8.0=j10.5

VDD=28V, IDQ=150 mA, POUT =15.0 W

TYPICAL DEVICE IMPEDANCES

ZIN is the series equivalent input impedance of the device

from gate to source.

ZLOAD is the optimum series equivalent load impedance

as measured from drain to ground.

Package Outline

LETTER

MILLIMETERS

INCHES

DIM

MIN

MAX

MIN

MAX

A

20.70

20.96

.815

.825

B

14.35

14.61

.565

.575

C

14.73

15.24

.580

.575

D

6.27

6.53

.247

.257

E

6.22

6.48

.245

.255

F

1.14

1.40

.045

.055

G

1.52

1.78

.060

.070

H

2.92

3.17

.115

.125

J

1.40

1.65

.055

.065

K

2.03

2.39

.080

.094

L

3.66

4.32

.144

.170

M

.10

.15

.004

.006

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