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KMB060N40BA Fiches technique(PDF) 1 Page - KEC(Korea Electronics) |
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KMB060N40BA Fiches technique(HTML) 1 Page - KEC(Korea Electronics) |
1 / 4 page 2009. 1. 14 1/4 SEMICONDUCTOR TECHNICAL DATA KMB060N40BA N-Ch Trench MOSFET Revision No : 0 General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and power Supply. FEATURES VDSS=40V, ID=60A. Low Drain to Source ON Resistance. : RDS(ON)=8.5m (Max.) @ VGS=10V : RDS(ON)=11m (Max.) @ VGS=4.5V Super High Dense Cell Design. High Power and Current Handling Capability. MAXIMUM RATING (Ta=25 Unless otherwise Noted) PIN CONNECTION (TOP VIEW) GS D 1 2 3 1 2 3 D 2PAK DIM MILLIMETERS A B C D F G Q R H J K L L E M N O P Q R B E D J G H A F P K 9.95 0.05 + _ 9.2 0.1 + _ 8.00 15.3 0.2 + _ 4.9 0.2 + _ 0.80 0.05 + _ 2.54 0.05 + _ 2.4 0.1 + _ 1.27 0.10 + _ 4.50 1.30 6.90 1.75 4.40 2.0 MIN + _ 0.1 0.15 0.05 C O M N 1.5 Φ Marking Type Name Lot No 060N40 BA KMB Note 1) RthJC means that the infinite heat sink is mounted. Note 2) Surface Mounted on 1″ 1″Pad of 2 oz copper. Note 3) L=42.5 H, IAS=60A, VDD=20V, VGS=10V, Starting Tj=25 CHARACTERISTIC SYMBOL N-Ch UNIT Drain to Source Voltage VDSS 40 V Gate to Source Voltage VGSS 20 V Drain Current DC@TC=25 (Note1) ID 60 A Pulsed (Note2) IDP 100 Drain to Source Diode Forward Current IS 100 A Single Pulsed Avalanche Energy (Note3) EAS 153 mJ Drain Power Dissipation @TC=25 (Note1) PD 69 W @Ta=25 (Note2) 3.1 Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Thermal Resistance, Junction to Case (Note1) RthJC 1.8 /W Thermal Resistance, Junction to Ambient (Note2) RthJA 40 /W |
Numéro de pièce similaire - KMB060N40BA |
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Description similaire - KMB060N40BA |
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