2SD1895 datasheet(2/3 Pages) JMNIC

No de pièce	2SD1895

Description	Silicon NPN Darlington Power Transistors

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Fabricant	JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]

Site Internet	http://www.jmnic.com

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Product Specification

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JMnic

Silicon NPN Darlington Power Transistors

2SD1895

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO

Collector-emitter voltage

IC=30mA ; IB=0

140

V

VCEsat

Collector-emitter saturation voltage

IC=7A ;IB=7mA

2.5

V

VBEsat

Emitter-base saturation voltage

IC=7A ;IB=7mA

3.0

V

ICBO

Collector cut-off current

VCB=160V; IE=0

100

μA

ICEO

Collector cut-off current

VCE=140V; IB=0

100

μA

IEBO

Emitter cut-off current

VEB=5V; IC=0

100

μA

hFE-1

DC current gain

IC=1A ; VCE=5V

2000

hFE -2

DC current gain

IC=7A ; VCE=5V

5000

30000

fT

Transition frequency

IC=0.5A ; VCE=10V;f=1MHz

20

MHz

Switching times

ton

Turn-on time

2.0

μs

tstg

Storage time

6.0

μs

tf

Fall time

IC=7A; VCC=50V

IB1=-IB2=7mA

1.2

μs

hFE-2 classifications

Q

P

5000-15000

8000-30000

Numéro de pièce similaire - 2SD1895

Fabricant	No de pièce	Fiches technique	Description
Panasonic Semiconductor	2SD1895	74Kb / 3P	Silicon PNP epitaxial planar type Darlington(For power amplification)
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