TPS1120D datasheet(7/12 Pages) TI

No de pièce	TPS1120D

Description	DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

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Fabricant	TI [Texas Instruments]

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TPS1120, TPS1120Y

DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

SLVS080A – MARCH 1994 – REVISED AUGUST 1995

7

POST OFFICE BOX 655303

• DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS

0.3

0.2

0.1

0

– 0.1

– 1

0.4

0.5

STATIC DRAIN-TO-SOURCE ON-STATE RESISTANCE

vs

DRAIN CURRENT

0.6

– 10

ID – Drain Current – A

0.7

VGS = – 2.7 V

VGS = – 3 V

VGS = – 4.5 V

VGS = –10 V

TJ = 25°C

Figure 5

200

150

50

0

0 – 1 – 2 – 3 – 4 – 5 – 6

250

300

CAPACITANCE

vs

DRAIN-TO-SOURCE VOLTAGE

350

– 7 – 8 – 9

–12

100

–10 –11

Coss

VDS – Drain-to-Source Voltage – V

Ciss†

Crss‡

VGS = 0

f = 1 MHz

TJ = 25°C

†

Crss + Cgd,Coss + Cds )

Cgs Cgd

Cgs ) Cgd

≈ C

ds )

C

gd

‡

C

iss +

Cgs ) Cgd,Cds(shorted)

Figure 6

Figure 7

1.2

0.9

0.8

0.6

1.3

1.4

STATIC DRAIN-TO-SOURCE

ON-STATE RESISTANCE (NORMALIZED)

vs

JUNCTION TEMPERATURE

1.5

1.1

1

0.7

– 50

0

50

100

150

TJ – Junction Temperature – °C

VGS = – 10 V

ID = – 1A

– 0.1

0

– 0.6

–1.2

–1.8

SOURCE-TO-DRAIN DIODE CURRENT

vs

SOURCE-TO-DRAIN VOLTAGE

–1

–10

– 0.2 – 0.4

– 0.8 – 1

–1.4 –1.6

VSD – Source-to-Drain Voltage – V

Pulse Test

TJ = 150°C

TJ = 25°C

TJ = – 40°C

Figure 8

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