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CSM-88121V9 Fiches technique(PDF) 4 Page - China Semiconductor Corporation |
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CSM-88121V9 Fiches technique(HTML) 4 Page - China Semiconductor Corporation |
4 / 6 page CHINA SEMICONDUCTOR Spec. No. CORPORATION Rev. Absolute Maximum Rating - (Ta=25 ) Symbol Unit PAD mW IAF mA IPF mA - mA/ VR V Topr Tstg Electro-optical Characteristics - (Ta=25 ) Symbol Min. Typ. Max. Unit Condition VF - 2.0 2.8 V IF=20mA Iv - 25 - mcd IF=10mA q - 632 - nm IF=20mA Od - 624 - nm IF=20mA - 20 - nm IF=20mA JS - - 100 A VR=5V IV-m - - 2:1 Ip=80mA 1/16Duty Page 3/5 A Model No CSM-88111V9/88121V9 http://www.csctw.com.tw Luminous Intensity Matching Ratio Derating Linear From 25 Per Dice 0.33 Reverse Voltage Per Dice Rating PS-ND-08090304 Peak Emission Wavelength Dominant Wavelength Spectrum Radiation Bandwidth Reverse Current 70 25 90 Parameter Power Dissipation Per Dice Continuous Forward Current Per Dice Peak Current Per Dice(duty cycle 1/10,1KHz) 5 Operating Temp. -35 ~ +85 Storage Temp. -35 ~ +85 Solder temperature 1/16 inch below seating plane for 3 seconds at 260 Parameter Forward Voltage Per Dot Luminous Intensity Per Dot |
Numéro de pièce similaire - CSM-88121V9 |
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Description similaire - CSM-88121V9 |
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