DB92549m-AAS/A1

PARAMETER

MIN TYP MAX UNITS

TEST CONDITION

Input

Forward Voltage (V

1.0

1.15

1.3

V

I

Output

Collector-emitter Breakdown (BV

55

V

I

(

Emitter-collector Breakdown (BV

6

V

I

Collector-emitter Dark Current (I

100

nA

V

Coupled

Current Transfer Ratio (CTR) (Note 2)

100

1200 %

± 1mAI

Low Input CTR

50

%

± 0.5mAI

Collector-emitter Saturation VoltageV

CE (SAT)

0.4

V

± 1mAI

0.2

V

± 1mAI

Input to Output Isolation Voltage V

ISO

5300

V

RMS

See note 1

7500

V

PK

See note 1

Input-output Isolation Resistance R

ISO

Ω

V

Rise Time

tr

8

µs

V

Fall Time

tf

8

µs

I

Turn-on Time

ton

10

µs

Turn-off Time

toff

8

µs

7/12/00

ELECTRICAL CHARACTERISTICS ( T

Note 1

Measured with input leads shorted together and output leads shorted together.

Note 2

Special Selections are available on request. Please consult the factory.

ABSOLUTE MAXIMUM RATINGS

(25°C unless otherwise specified)

Storage Temperature

-55°C to + 125°C

Operating Temperature

-55°C to + 100°C

Lead Soldering Temperature

(1/16 inch (1.6mm) from case for 10 secs) 260°C

INPUT DIODE

Forward Current

± 50mA

Power Dissipation

70mW

OUTPUT TRANSISTOR

Collector-emitter Voltage BV

CEO

55V

Emitter-collector Voltage BV

ECO

6V

Power Dissipation

150mW

POWER DISSIPATION

Total Power Dissipation

200mW

(derate linearly 2.67mW/°C above 25°C)