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AME385AEASZ Fiches technique(PDF) 5 Page - Analog Microelectronics |
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AME385AEASZ Fiches technique(HTML) 5 Page - Analog Microelectronics |
5 / 14 page AME 5 AME385-1.2 Shunt Bandgap Voltage Reference Rev.G.03 n Absolute Maximum Ratings n Recommended Operating Conditions Caution: Stress above the listed absolute maximum rating may cause permanent damage to the device Parameter Maximum Unit Supply Current 50 mA Parameter Symbol Rating Unit Ambient Temperature Range TA - 40 to +85 oC Junction Temperature Range TJ - 40 to +125 oC Storage Temperature Range TSTG - 65 to +150 oC Supply Current 100 µA ~ 20mA Parameter Symbol Min Typ Max Units Reference Voltage, ±0.5% VREF 1.229 1.235 1.241 V 1.5 3 5 20 Reverse Dynamic Impedence RDI 1.5 Ohm Wideband Noise (rms) Vn 60 µV Long term Stability 20 ppm Reference Voltage Temp. Coeff. VREFTC 100 ppm/ oC Operation Current IOP 0.030 20 mA mV Test Condition Reference Voltage Change With Current dVREF/I IREF = 100µA IMIN < I < 1mA 1mA < I < 20mA IR= 100µA, 10 Hz<f<10KHz IR= 100µA, TA=25 oC, T=1000 Hours IR= 100µA, f=20Hz 0 oC < T A < 70 oC n Electrical Specifications Unless otherwise specified, T A = 0~70 OC, I R = 100µA |
Numéro de pièce similaire - AME385AEASZ |
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Description similaire - AME385AEASZ |
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