Dated : 29/08/2008
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
ST 13001
NPN Silicon Epitaxial Planar Transistor
for high voltage and high speed switching applications
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
VCBO
500
V
Collector Emitter Voltage
VCEO
400
V
Emitter Base Voltage
VEBO
9
V
Collector Current (DC)
IC
0.3
A
Total Power Dissipation
Ptot
0.75
W
Junction Temperature
Tj
150
O
C
Storage Temperature Range
TS
- 55 to + 150
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
at VCE = 10 V, IC = 0.25 mA
at VCE = 20 V, IC = 20 mA
hFE
hFE
5
10
-
40
-
-
Collector Base Cutoff Current
at VCB = 500 V
ICBO
-
100
µA
Collector Emitter Cutoff Current
at VCE = 400 V
ICEO
-
200
µA
Emitter Base Cutoff Current
at VEB = 9 V
IEBO
-
100
µA
Collector Base Breakdown Voltage
at IC = 100 µA
V(BR)CBO
500
-
V
Collector Emitter Breakdown Voltage
at IC = 1 mA
V(BR)CEO
400
-
V
Emitter Base Breakdown Voltage
at IE = 100 µA
V(BR)EBO
9
-
V
Collector Emitter Saturation Voltage
at IC = 50 mA, IB = 10 mA
VCE(sat)
-
0.5
V
Base Emitter Saturation Voltage
at IC = 50 mA, IB = 10 mA
VBE(sat)
-
1.2
V
Transition Frequency
at VCE = 20 V, IC = 20 mA, f = 1 MHz
fT
8
-
MHz
Fall Time
at IC = 50 mA, IB = -IB2 = 5 mA, VCC = 45 V
tf
-
0.3
µs
Storage Time
at IC = 50 mA, IB = -IB2 = 5 mA, VCC = 45 V
ts
-
1.5
µs
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Weight approx. 0.19g