Dated : 19/09/2008
®
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
ST 8050U
NPN Silicon Epitaxial Planar Transistor
for switching and amplifier applications.
Especially suitable for AF-driver stages
and low power output stages.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
VCBO
40
V
Collector Emitter Voltage
VCEO
25
V
Emitter Base Voltage
VEBO
6
V
Collector Current
IC
1.5
A
Power Dissipation
Ptot
625
mW
Junction Temperature
Tj
150
O
C
Storage Temperature Range
TS
- 55 to + 150
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at VCE = 1 V, IC = 5 mA
at VCE = 1 V, IC = 100 mA
Current Gain Group
at VCE = 1 V, IC = 800 mA
C
D
hFE
hFE
hFE
hFE
45
120
160
40
-
-
-
-
-
200
300
-
-
-
-
-
Collector Base Cutoff Current
at VCB = 35 V
ICBO
-
-
100
nA
Emitter Base Cutoff Current
at VEB = 6 V
IEBO
-
-
100
nA
Collector Base Breakdown Voltage
at IC = 100 µA
V(BR)CBO
40
-
-
V
Collector Emitter Breakdown Voltage
at IC = 2 mA
V(BR)CEO
25
-
-
V
Emitter Base Breakdown Voltage
at IE = 100 µA
V(BR)EBO
6
-
-
V
Collector Emitter Saturation Voltage
at IC = 800 mA, IB = 80 mA
VCE(sat)
-
-
0.5
V
Base Emitter Saturation Voltage
at IC = 800 mA, IB = 80 mA
VBE(sat)
-
-
1.2
V
Base Emitter Voltage
at IC = 10 mA, VCE = 1 V
VBE
-
-
1
V
Gain Bandwidth Product
at VCE = 10 V, IC = 50 mA
fT
100
-
-
MHz
Collector Base Capacitance
at VCB = 10 V, f = 1 MHz
COB
-
9
-
pF