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NBXSBB020LN1TAG Fiches technique(PDF) 4 Page - ON Semiconductor |
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NBXSBB020LN1TAG Fiches technique(HTML) 4 Page - ON Semiconductor |
4 / 6 page NBXSBB020, NBXSBA020 http://onsemi.com 4 Table 6. AC CHARACTERISTICS (VDD = 3.3 V ± 10%, GND = 0 V, TA = -40°C to +85°C) (Note 3) Symbol Characteristic Conditions Min. Typ. Max. Units fCLKOUT Output Clock Frequency 280 MHz Df Frequency Stability - NBXSBB020 Frequency Stability - NBXSBA020 0 °C to +70°C -40 °C to +85°C (Note 4) ±20 ±50 PPM FNOISE Phase-Noise Performance 100 Hz of Carrier -102 dBc/Hz fCLKout = 280 MHz (See Figure 3) 1 kHz of Carrier -114 dBc/Hz 10 kHz of Carrier -123 dBc/Hz 100 kHz of Carrier -123 dBc/Hz 1 MHz of Carrier -132 dBc/Hz 10 MHz of Carrier -157 dBc/Hz tjit(F) RMS Phase Jitter 12 kHz to 20 MHz 0.4 0.9 ps tjitter Cycle to Cycle, RMS 1000 Cycles 2 8 ps Cycle to Cycle, Peak-to-Peak 1000 Cycles 13 30 ps Period, RMS 10,000 Cycles 1 4 ps Period, Peak-to-Peak 10,000 Cycles 10 20 ps tOE/OD Output Enable/Disable Time 200 ns tDUTY_CYCLE Output Clock Duty Cycle (Measured at Cross Point) 48 50 52 % tR Output Rise Time (20% and 80%) 250 400 ps tF Output Fall Time (80% and 20%) 250 400 ps tstart Start-up Time 1 5 ms Aging 1st Year 3 ppm Every Year After 1st 1 ppm NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 3. Measurement taken with outputs terminated with 50 ohm to VDD-2 V. See Figure 4. 4. Parameter guarantees 10 years of aging. Includes initial stability at 25 °C, shock, vibration, and first year aging. Figure 3. Typical Phase Noise Plot |
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