Dated : 28/04/2006
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
ST 13002T / ST 13003T
NPN Silicon Power Transistors
These devices are designed for high-voltage,
high-speed power switching inductive circuits
where fall time is critical.
They are particularly suited for 115 and 220V
SWITCHMODE applications such as Switching
Regulator’s, Inverters, Motor Controls, Solenoid /
Relay drivers and Deflection circuits.
TO-126 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Value
Parameter
Symbol
ST13002T
ST13003T
Unit
Collector Emitter Voltage
VCEO(sus)
300
400
V
Collector Emitter Voltage
VCEV
600
700
V
Emitter Base Voltage
VEBO
9
V
Collector Current - Continuous
Collector Current - Peak
1)
IC
ICM
1.5
3
A
Base Current - Continuous
Base Current - Peak
1)
IB
IBM
0.75
1.5
A
Emitter Current - Continuous
Emitter Current - Peak
1)
IE
IEM
2.25
4.5
A
Total Power Dissipation @ TA = 25 OC
Derate above 25 OC
PD
1.4
11.2
W
mW/OC
Total Power Dissipation @ TC = 25 OC
Derate above 25 OC
PD
40
320
W
mW/OC
Operating and Storage Junction Temperature Range
TJ, Ts
-65 to +150
O
C
Thermal Resistance ,Junction to Ambient
RθJA
89
O
C/W
Thermal Resistance ,Junction to Case
RθJC
3.12
O
C/W
1)
Pulse Test: Pulse Width=5ms, Duty Cycle
≤10%.
E
C
B