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2SD1425 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD1425 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 3 page Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1425 DESCRIPTION ·With TO-3P(H)1S package ·Built-in damper diode ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Designed for use in color TV deflection circuits PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 2.5 A IB Base current 1.0 A PD Total power dissipation TC=25℃ 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-C Thermal resistance junction case 1.56 ℃/W Fig.1 simplified outline (TO-3P(H)IS) and symbol |
Numéro de pièce similaire - 2SD1425 |
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Description similaire - 2SD1425 |
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