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BD376 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce BD376
Description  isc Silicon PNP Power Transistors
Download  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD376 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistors
BD376/378/380
DESCRIPTION
·DC Current Gain-
: hFE= 20(Min)@ IC= -1A
·Complement to Type BD375/377/379
APPLICATIONS
·Designed for medium power linear and switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD376
-50
BD378
-75
VCBO
Collector-Base Voltage
BD380
-100
V
BD376
-45
BD378
-60
VCEO
Collector-Emitter Voltage
BD380
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-2
A
ICM
Collector Current-Peak
-3
A
IB
B
Base Current-Continuous
-1
A
PC
Collector Power Dissipation
@ TC=25℃
25
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn


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