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BU808 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BU808 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU808 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 700V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in three-phase AC motor control systems ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage VBE=0 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 20 A IB B Base Current-Continuous 8 A IBM Base Current-Peak 12 A PC Collector Power Dissipation @TC=25℃ 160 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.78 ℃/W isc Website:www.iscsemi.cn |
Numéro de pièce similaire - BU808 |
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Description similaire - BU808 |
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