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2N3055H Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N3055H Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Website:www.iscsemi.cn 2 isc Silicon NPN Power Transistor 2N3055H ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=200mA ; IB=0 100 V VCER(SUS) Collector-Emitter Sustaining Voltage IC=200mA ; RBE=100Ω 70 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A 1.1 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 3.3A 3.0 V VBE(on) Base-Emitter On Voltage IC= 4A ; VCE= 4V 1.5 V ICEO Collector Cutoff Current VCE= 30V; IB=0 0.7 mA ICEX Collector Cutoff Current VCE= 100V; VBE(off)= 1.5V VCE= 100V; VBE(off)= 1.5V,TC=150℃ 1.0 5.0 mA IEBO Emitter Cutoff Current VEB= 7.0V; IC=0 5.0 mA hFE-1 DC Current Gain IC= 4A ; VCE= 4V 20 70 hFE-2 DC Current Gain IC= 10A ; VCE= 4V 5.0 Is/b Second Breakdown Collector Current with Base Forward Biased VCE= 40V,t= 1.0s,Nonrepetitive 2.87 A fT Current Gain-Bandwidth Product IC= 0.5A ; VCE= 10V;f=1.0MHz 2.5 MHz |
Numéro de pièce similaire - 2N3055H |
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Description similaire - 2N3055H |
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