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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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2SK3432 Fiches technique(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SK3432 Fiches technique(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page  SMD Type MOSFET 1 www.kexin.com.cn 1.27+0.1 -0.1 1.27+0.1 -0.1 5.08+0.1 -0.1 0.1max 2.54+0.2 -0.2 2.54 4.57+0.2 -0.2 0.4+0.2 -0.2 0.81+0.1 -0.1 TO-263 Unit: mm 1Gate 2Drain 3 Source MOS Field Effect Transistor 2SK3432 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 40 V Gate to source voltage VGSS 20 V ID 83 A Idp * 332 A Power dissipation TC=25 100 TA=25 1.5 Channel temperature Tch 150 Storage temperature Tstg -55to+150 *PW 10 s,Duty Cycle 1% Drain current PD W Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain cut-off current IDSS VDS=40V,VGS=0 10 A Gate leakage current IGSS VGS= 20V,VDS=0 10 A Gat cutoff voltage VGS(off) VDS=10V,ID=1mA 1.5 2.0 2.5 V Forward transfer admittance Yfs VDS=10V,ID=42A 40 80 S RDS(on)1 VGS=10V,ID=42A 3.2 4.0 m RDS(on)2 VGS=4V,ID=42A 4.8 6.9 m Input capacitance Ciss 9500 pF Output capacitance Coss 2200 pF Reverse transfer capacitance Crss 920 pF Turn-on delay time ton 140 ns Rise time tr 1800 ns Turn-off delay time toff 470 ns Fall time tf 410 ns Total Gate Charge QG 150 nC Gate to Source Charge QGS 29 nC Gate to Drain Charge QGD 45 nC VDS=10V,VGS=0,f=1MHZ ID=42A,VGS(on)=10V,RG=10 ,VDD=20V Draintosourceon-stateresistance ID =83A, VDD =32V, VGS =10V Features Super low on-state resistance: RDS(on)1 =4.0m MAX. (VGS =10V, ID =42A) RDS(on)2 =6.9 m MAX. (VGS =4V, ID =42A) Low Ciss:Ciss = 9500 pF TYP. Built-in gate protection diode |
Numéro de pièce similaire - 2SK3432 |
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Description similaire - 2SK3432 |
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