BAS34 datasheet(2/3 Pages) VISHAY

No de pièce	BAS34

Description	Silicon Planar Diodes

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Fabricant	VISHAY [Vishay Siliconix]

Site Internet	http://www.vishay.com

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BAS33.BAS34

Vishay Telefunken

Rev. 2, 01-Apr-99

2 (3)

www.vishay.de

• FaxBack +1-408-970-5600

Document Number 85541

Electrical Characteristics

Tj = 25_C

Parameter

Test Conditions

Type

Symbol

Min

Typ

Max

Unit

Forward voltage

IF=100mA

VF

1

V

Reverse current

E

x300lx, VR

IR

1

3

nA

E

x300lx, VR, Tj=125°C

IR

0.5

mA

E

x300lx, VR=15V

BAS33

IR

0.5

1

nA

E

x300lx, VR=30V

BAS34

IR

0.5

1

nA

Breakdown voltage

IR=5mA, tp/T=0.01, tp=0.3ms

BAS33

V(BR)

40

V

g

R

m

BAS34

V(BR)

70

V

Diode capacitance

VR=0, f=1MHz

CD

3

pF

Characteristics (Tj = 25_C unless otherwise specified)

0

40

80

120

160

1

10

100

1000

10000

Tj – Junction Temperature ( °C )

200

94 9079

Scattering Limit

VR =VRRM

Figure 1. Reverse Current vs. Junction Temperature

0

0.4

0.8

1.2

1.6

0.1

1

10

100

1000

VF – Forward Voltage ( V )

2.0

94 9078

Scattering Limit

Tj =25°C

Figure 2. Forward Current vs. Forward Voltage

Dimensions in mm

Cathode Identification

∅ 1.7 max.

∅ 0.55 max.

3.9 max.

26 min.

technical drawings

according to DIN

specifications

94 9366

Standard Glass Case

54 A 2 DIN 41880

JEDEC DO 35

Weight max. 0.3 g

26 min.

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Vishay Siliconix	BAS34	113Kb / 4P	Small Signal Switching Diodes Rev. 1.6, 16-Feb-07
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