4N35GV datasheet(3/9 Pages) VISHAY

No de pièce	4N35GV

Description	Optocoupler with Phototransistor Output

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Fabricant	VISHAY [Vishay Siliconix]

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4N25(G)V/ 4N35(G)V Series

Vishay Telefunken

Rev. A4, 11–Jan–99

88

Electrical Characteristics (Tamb = 25°C)

Input (Emitter)

Parameter

Test Conditions

Symbol

Min.

Typ.

Max.

Unit

Forward voltage

IF = 50 mA

Tamb = 100°C

VF

1.2

1.4

V

Junction capacitance

VR = 0, f = 1 MHz

Cj

50

pF

Output (Detector)

Parameter

Test Conditions

Symbol

Min.

Typ.

Max.

Unit

Collector emitter voltage

IC = 1 mA

VCEO

32

V

Emitter collector voltage

IE = 100 mA

VECO

7

V

Collector emitter cut-off

current

VCE = 10 V, IF = 0,

Tamb = 100°C

ICEO

50

nA

VCE = 30 V, IF = 0,

Tamb = 100°C

ICEO

500

mA

Coupler

Parameter

Test Conditions

Symbol

Min.

Typ.

Max.

Unit

Collector emitter

saturation voltage

IF = 50 mA, IC = 2 mA

VCEsat

0.3

V

Cut-off frequency

VCE = 5 V, IF = 10 mA,

RL = 100 W

fc

110

kHz

Coupling capacitance

f = 1 MHz

Ck

1

pF

Current Transfer Ratio (CTR)

Parameter

Test Conditions

Type

Symbol

Min.

Typ.

Max.

Unit

IC/IF

VCE = 10 V, IF = 10 mA

4N25(G)V

CTR

0.20

1

C F

CE

F

4N35(G)V

CTR

1.00

1.5

VCE = 10 V, IF = 10 mA,

Tamb = 100°C

4N35(G)V

CTR

0.40

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