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KDV303N Fiches technique(PDF) 3 Page - Guangdong Kexin Industrial Co.,Ltd |
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KDV303N Fiches technique(HTML) 3 Page - Guangdong Kexin Industrial Co.,Ltd |
3 / 4 page www.kexin.com.cn 3 0 0.5 1 1.5 2 0 0.3 0.6 0.9 1.2 1.5 V , DRAIN-SOURCE VOLTAGE (V) 3.5 2.7 2.5 2.0 1.5 DS V = 4.5V GS 3.0 0 0.2 0.4 0.6 0.8 1 1.2 0.5 1 1.5 2 I , DRAIN CURRENT (A) V = 2.0V GS 2.7 3.0 4.5 D 3.5 2.5 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. -50 -25 0 25 50 75 100 125 150 0.6 0.8 1 1.2 1.4 1.6 T , JUNCTION TEMPERATURE (°C) J V = 4.5 V GS I =0.5 A D Figure 3. On-Resistance Variation with Temperature. 0 0.5 1 1.5 2 2.5 0 0.2 0.4 0.6 0.8 1 V , GATE TO SOURCE VOLTAGE (V) 25°C 125°C V = 5.0V DS GS T = -55°C J Figure 5. Transfer Characteristics. 0 0.2 0.4 0.6 0.8 1 1.2 0.0001 0.001 0.01 0.1 1 V , BODY DIODE FORWARD VOLTAGE (V) T = 125°C J 25°C -55°C V = 0V GS SD Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. Figure 4. On Resistance Variation with Gate-To- Source Voltage. 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.4 0.8 1.2 1.6 2 V , GATE TO SOURCE VOLTAGE (V) ID= 0.5A GS 125°C 25°C KDV303N SMD Type IC SMD Type MOSFET Typical Characteristics |
Numéro de pièce similaire - KDV303N |
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Description similaire - KDV303N |
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