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2SC3496A Fiches technique(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

No de pièce 2SC3496A
Description  NPN Silicon Triple Diffused Transistor
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Fabricant  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Site Internet  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SC3496A Fiches technique(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SC3496A Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
Transistors
1
2.3
0.60+0.1
-0.1
6.50+0.15
-0.15
0.80+0.1
-0.1
4.60+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
0.127
max
TO-252
Unit: mm
1 Base
2 Collector
3 Emitter
www.kexin.com.cn
NPN Silicon Triple Diffused Transistor
2SC3496A
Features
High-speed switching
High collector-base voltage (Emitter open) VCBO
Satisfactory linearity of forward current transfer ratio hFE
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
1000
V
Collector-emitter voltage
VCES
1000
V
Collector-emitter voltage
VCEO
900
V
Emitter-base voltage (Collector open)
VEBO
7V
Base current
IB
0.3
A
Collector current
IC
1A
Peak collector current
ICP
2A
Collector power dissipation
TC =25
30
Ta =25
1.3
Junction temperature
Tj
150
Storage temperature
Tstg
-55to+150
PC
W
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-emitter voltage
VCEO
IC =1mA, IB =0
900
V
Collector-base cutoff current
ICBO
VCB = 1000 V, IE =0
50
ìA
Emitter-base cutoff current (Collector open)
IEBO
VEB =7V, IC =0
50
ìA
VCE =5V, IC =0.05A
6
VCE =5V, IC =0.5 A
3
Collector-emitter saturation voltage
VCE(sat)
IC =0.2 A, IB =0.04A
1.5
V
Base-emitter saturation voltage
VBE(sat)
IC =0.2 A, IB =0.04A
1.0
V
Transition frequency
fT
VCE =10V, IC =0.05A, f =1MHz
4
MHz
Turn-on time
ton
IC =0.2 A
1.0
ìs
Storage time
tstg
IB1 =0.04A, IB2 = -0.08 A
3.0
ìs
Fall time
tf
VCC =250 V
1ìs
Forward current transfer ratio
hFE


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