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2SC3496A Fiches technique(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SC3496A Fiches technique(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page SMD Type Transistors 1 2.3 0.60+0.1 -0.1 6.50+0.15 -0.15 0.80+0.1 -0.1 4.60+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 0.127 max TO-252 Unit: mm 1 Base 2 Collector 3 Emitter www.kexin.com.cn NPN Silicon Triple Diffused Transistor 2SC3496A Features High-speed switching High collector-base voltage (Emitter open) VCBO Satisfactory linearity of forward current transfer ratio hFE Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 1000 V Collector-emitter voltage VCES 1000 V Collector-emitter voltage VCEO 900 V Emitter-base voltage (Collector open) VEBO 7V Base current IB 0.3 A Collector current IC 1A Peak collector current ICP 2A Collector power dissipation TC =25 30 Ta =25 1.3 Junction temperature Tj 150 Storage temperature Tstg -55to+150 PC W Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-emitter voltage VCEO IC =1mA, IB =0 900 V Collector-base cutoff current ICBO VCB = 1000 V, IE =0 50 ìA Emitter-base cutoff current (Collector open) IEBO VEB =7V, IC =0 50 ìA VCE =5V, IC =0.05A 6 VCE =5V, IC =0.5 A 3 Collector-emitter saturation voltage VCE(sat) IC =0.2 A, IB =0.04A 1.5 V Base-emitter saturation voltage VBE(sat) IC =0.2 A, IB =0.04A 1.0 V Transition frequency fT VCE =10V, IC =0.05A, f =1MHz 4 MHz Turn-on time ton IC =0.2 A 1.0 ìs Storage time tstg IB1 =0.04A, IB2 = -0.08 A 3.0 ìs Fall time tf VCC =250 V 1ìs Forward current transfer ratio hFE |
Numéro de pièce similaire - 2SC3496A |
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Description similaire - 2SC3496A |
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