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CZT2000 Fiches technique(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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CZT2000 Fiches technique(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page SMD Type Transistors 1 www.kexin.com.cn PNP Silicon Extremely High Voltage Darlington Transistor CZT2000 Features Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 200 V Collector-Emitter Voltage VCEO 200 V Emitter-Base Voltage VEBO 10 V Collector Current IC 600 mA Power Dissipation PD 2W Operating and Storage Junction Temperature TJ,Tstg -65to150 Thermal Resistance ÈJA 62.5 /W Electrical Characteristics Ta = 25 Symbol Testconditons Min Max Unit ICBO VCB=180V 500 nA IEBO VBE=10V 100 nA BVCES IC=1.0mA 200 V VCE(SAT) IC=20mA, IB=25ìA 0.9 V VCE(SAT) IC=80mA, IB=40ìA 1.1 V VCE(SAT) IC=160mA, IB=100ìA 1.2 V VBE(ON) VCE=5.0V, IC=160mA 2.0 V VCE=5.0V, IC=100ìA 3,000 VCE=5.0V, IC=10mA 3,000 VCE=5.0V, IC=160mA 3,000 hFE SOT-223 Unit: mm 3.00+0.1 -0.1 0.70+0.1 -0.1 2.9 4.6 6.50+0.2 -0.2 3.50+0.2 -0.2 0.90+0.2 -0.2 7.00+0.3 -0.3 12 4 3 1 Base 2 Collector 3 Emitter 4 Collector |
Numéro de pièce similaire - CZT2000 |
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Description similaire - CZT2000 |
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