BAS125-04 datasheet(2/2 Pages) KEXIN

No de pièce	BAS125-04

Description	Silicon Schottky Diodes

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Fabricant	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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SMD Type

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Electrical Characteristics Ta = 25

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

VR =20V

1

VR =25V

10

IF = 1 mA

385

410

IF = 10 mA

530

IF = 35 mA

800

900

Diode capacitance

CT

VR =0, f=10kHz

1.1

pF

Differential forward resistance

RF

IF =5mA, f=10kHz

15

IR

VF

Reverse voltage

Forward voltage

A

mV

Silicon Schottky Diodes

BAS125 series

Marking

Type

BAS125

BAS125-04

BAS125-05

BAS125-06

Marking

13141516

Numéro de pièce similaire - BAS125-04

Fabricant	No de pièce	Fiches technique	Description
Siemens Semiconductor G...	BAS125-04	104Kb / 5P	Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications)
Siemens Semiconductor G...	BAS125-04W	106Kb / 5P	Preliminary data Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping application)
Infineon Technologies A...	BAS125-04W	58Kb / 5P	Silicon Schottky Diodes Nov-15-2001
Guangdong Kexin Industr...	BAS125-04W	46Kb / 1P	Silicon Schottky Diodes
Infineon Technologies A...	BAS125-04W	104Kb / 8P	Silicon Schottky Diodes 2007-04-19

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Description similaire - BAS125-04

Fabricant	No de pièce	Fiches technique	Description
Central Semiconductor C...	CMRD6263DO	855Kb / 3P	SILICON SCHOTTKY DIODES
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Infineon Technologies A...	BAT64-E6327	213Kb / 12P	Silicon Schottky Diodes 2007-06-11
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Central Semiconductor C...	CMPD6263	587Kb / 2P	SILICON SCHOTTKY DIODES
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Infineon Technologies A...	BAT-68-E6327	905Kb / 12P	Silicon Schottky Diodes 2011-06-15
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BAS125-04 Fiches technique(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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