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2SA1566 Fiches technique(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

No de pièce 2SA1566
Description  Silicon PNP Epitaxial
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Fabricant  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Site Internet  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SA1566 Fiches technique(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SA1566 Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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background image
SMD Type
Transistors
1
www.kexin.com.cn
0.4+0.1
-0.1
2.9+0.1
-0.1
0.95+0.1
-0.1
1.9+0.1
-0.1
1.Base
2.Emitter
3.collector
12
3
Unit: mm
SOT-23
0.1+0.05
-0.01
Silicon PNP Epitaxial
2SA1566
Features
Low frequency amplifier.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
-120
V
Collector to emitter voltage
VCEO
-120
V
Emitter to base voltage
VEBO
-5
V
Collector current
IC
-100
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55to+150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector to base breakdown voltage
V(BR)CBO IC =-10 ìA, IE = 0
-120
V
Collector to emitter breakdown voltage
V(BR)CEO IC =-1mA, RBE =
-120
V
Emitter to base breakdown voltage
V(BR)EBO IE =-10 ìA, IC =0
-5
V
Collector cutoff current
ICBO
VCB =-70 V, IE =0
-0.1
ìA
Emitter cutoff current
IEBO
VEB =-2V, IC =0
-0.1
ìA
DC current transfer ratio
hFE
VCE =-12 V,IC = -2 mA
250
800
Collector to emitter saturation voltage
VCE(sat) IC =-10 mA,IB = -1 mA
-0.15
V
Base to emitter saturation voltage
VBE(sat) IC =-10 mA,IB =-1mA
1.2
V
hFE Classification
Marking
JID
JIE
Rank
D
E
hFE
250
500
400
800


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