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BCP69-25 Fiches technique(PDF) 7 Page - NXP Semiconductors |
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BCP69-25 Fiches technique(HTML) 7 Page - NXP Semiconductors |
7 / 13 page BCP69_6 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 06 — 2 December 2008 7 of 13 NXP Semiconductors BCP69 20 V, 1 A PNP medium power transistor VCE = −1V Tamb =25 °C Fig 3. BCP69-16: DC current gain as a function of collector current; typical values Fig 4. BCP69-16: Collector current as a function of collector-emitter voltage; typical values VCE = −1V IC/IB =10 Fig 5. BCP69-16: Base-emitter voltage as a function of collector current; typical values Fig 6. BCP69-16: Collector-emitter saturation voltage as a function of collector current; typical values mle305 102 103 −10−1 −1 −10 −102 −103 −104 IC (mA) hFE 006aab403 0 IC (A) VCE (V) −2.4 −1.6 −2.0 −0.8 −1.2 −0.4 0 −1 −5 −2 −3 −4 IB (mA) = −18.0 −16.2 −3.6 −5.4 −7.2 −9.0 −14.4 −12.6 −10.8 −1.8 mle304 −400 −600 −200 −800 −1000 VBE (mV) 0 IC (mA) −10−1 −104 −103 −1 −102 −10 mle306 −10 −103 −102 −10−1 −1 −10 IC (mA) VCEsat (mV) −102 −103 −104 −1 |
Numéro de pièce similaire - BCP69-25 |
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Description similaire - BCP69-25 |
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