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74LVTH574PW Fiches technique(PDF) 6 Page - NXP Semiconductors

No de pièce 74LVTH574PW
Description  3.3 V octal D-type flip-flop; 3-state
Download  16 Pages
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Fabricant  NXP [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo NXP - NXP Semiconductors

74LVTH574PW Fiches technique(HTML) 6 Page - NXP Semiconductors

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74LVT_LVTH574_4
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 04 — 11 September 2008
6 of 16
NXP Semiconductors
74LVT574; 74LVTH574
3.3 V octal D-type flip-flop; 3-state
[1]
Typical values are measured at VCC = 3.3 V and Tamb =25 °C.
[2]
For valid test results, data must not be loaded into the flip-flops (or latches) after applying power.
[3]
Unused pins at VCC or GND.
[4]
This is the bus hold overdrive current required to force the input to the opposite logic state.
[5]
This parameter is valid for any VCC between 0 V and 1.2 V with a transition time of up to 10 ms. From VCC = 1.2 V to VCC = 3.3 V ± 0.3 V
a transition time of 100
µs is permitted. This parameter is valid for T
amb =25 °C only.
[6]
ICC is measured with outputs pulled to VCC or GND.
[7]
This is the increase in supply current for each input at the specified voltage level other than VCC or GND.
10. Dynamic characteristics
IBHLO
bus hold LOW
overdrive current
VCC =0V; VI = 0V to 3.0 V
−500
-
-
µA
IO(pu/pd)
power-up/power-down
output current
VCC ≤ 1.2 V; VO = 0.5 V to VCC;
VI = GND or VCC; OE = don’t care
[5]
-1
±100
µA
IOZ
OFF-state output current
VCC = 3.6 V; VI =VIH or VIL
output HIGH: VO = 3.0 V
-
1
5
µA
output LOW: VO = 0.5 V
−51-
µA
ICC
supply current
VCC = 3.6 V; VI = GND or VCC; IO =0A
outputs HIGH
-
0.13
0.19
mA
outputs LOW
-
3
12
mA
outputs disabled
[6]
-
0.13
0.19
mA
∆ICC
additional supply current
per input pin; VCC = 3 V to 3.6 V; one input
at VCC − 0.6 V and other inputs at VCC or
GND
[7]
-
0.1
0.2
mA
CI
input capacitance
VI = 0 V or 3.0 V
-
4
-
pF
CO
output capacitance
outputs disabled; VO = 0 V or 3.0 V
-
8
-
pF
Table 6.
Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Tamb = −40 °C to +85 °C
Unit
Min
Typ[1]
Max
Table 7.
Dynamic characteristics
Voltages are referenced to ground (GND = 0 V); for test circuit see Figure 10.
Symbol Parameter
Conditions
Tamb = −40 °C to +85 °C Unit
Min
Typ[1]
Max
tPLH
LOW to HIGH propagation delay
CP to Qn; see Table 6
VCC = 3.0 V to 3.6 V
1.7
3.6
5.4
ns
VCC = 2.7 V
-
-
6.2
ns
tPHL
HIGH to LOW propagation delay
CP to Qn; see Table 6
VCC = 3.0 V to 3.6 V
2.4
4.3
5.9
ns
VCC = 2.7 V
-
-
6.6
ns
tPZH
OFF-state to HIGH propagation delay OE to Qn; see Figure 7
VCC = 3.0 V to 3.6 V
1.0
2.9
4.8
ns
VCC = 2.7 V
-
-
5.9
ns


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