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TPA6043A4 Fiches technique(PDF) 2 Page - Texas Instruments |
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TPA6043A4 Fiches technique(HTML) 2 Page - Texas Instruments |
2 / 30 page Bias Control LDO HP_EN BYPASS REG_EN SPKR_RIN+ SPKR_RIN– Gain Control SPKR_LIN+ SPKR_LIN– Charge Pump CPVDD CPVSS CPGND C1P C1N VDD + – – + + – – + ROUT+ ROUT– SPVDD SPGND LOUT+ LOUT– SPVDD SPGND HP_INL HP_INR HP_OUTL HP_OUTR HPVDD – – + + 1 mF 1 mF 1 F m GND GAIN0 GAIN1 HPVDD HPVSS SPKR_EN 0.47 F m 1 F m 1 mF 1 mF 1 mF 1 mF 1 mF 1 mF 1 mF 1 mF HPVDD SPGND 3 V 5.5 V – SPVDD 4.5 V – 5.5 V HPVSS (3.3-V Output) REG_OUT TPA6045A4C SLOS614 – OCTOBER 2008.............................................................................................................................................................................................. www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Functional Block Diagram 2 Submit Documentation Feedback Copyright © 2008, Texas Instruments Incorporated Product Folder Link(s): TPA6045A4C |
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