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BAS20-V Fiches technique(PDF) 2 Page - Vishay Siliconix |
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BAS20-V Fiches technique(HTML) 2 Page - Vishay Siliconix |
2 / 6 page www.vishay.com 2 Document Number 85540 Rev. 1.5, 22-Jul-05 BAS19-V / 20-V / 21-V Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified 1) Measured under pulse conditions; Pulse time = T p ≤ 0.3 ms 2) Device on fiberglass substrate, see layout on next page Thermal Characteristics Tamb = 25 °C, unless otherwise specified 1) Device on fiberglass substrate, see layout on next page Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Part Symbol Value Unit Continuous reverse voltage BAS19-V VR 100 V BAS20-V VR 150 V BAS21-V VR 200 V Repetitive peak reverse voltage BAS19-V VRRM 120 V BAS20-V VRRM 200 V BAS21-V VRRM 250 V Non-repetitive peak forward current t = 1 µsI FSM 2.5 A Non-repetitive peak forward surge current t = 1 s IFSM 0.5 A Maximum average forward rectified current (av. over any 20 ms period) IF(AV) 2001) mA DC forward current Tamb = 25 °C IF 2002) mA Repetitive peak forward current IFRM 625 mA Power dissipation Tamb = 25 °C Ptot 2502) mW Parameter Test condition Symbol Value Unit Thermal resistance junction to ambient air RthJA 4301) °C Junction temperature Tj 150 °C Storage temperature range TS - 65 to + 150 °C Parameter Test condition Symbol Min Typ. Max Unit Forward voltage IF = 100 mA VF 1.0 V IF = 200 mA VF 1.25 V Leakage current VR = VRmax IR 100 nA VR = VRmax, Tj = 150 °C IR 100 µA Dynamic forward resistance IF = 10 mA rf 5 Ω Diode capacitance VR = 0, f = 1 MHz Ctot 5pF Reverse recovery time IF = IR = 30 mA, RL = 100 Ω, Irr = 3 mA trr 50 ns |
Numéro de pièce similaire - BAS20-V |
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Description similaire - BAS20-V |
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