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ST203C12CHH1LP Fiches technique(PDF) 7 Page - Vishay Siliconix |
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ST203C12CHH1LP Fiches technique(HTML) 7 Page - Vishay Siliconix |
7 / 9 page Document Number: 94370 For technical questions, contact: ind-modules@vishay.com www.vishay.com Revision: 30-Apr-08 7 ST203CPbF Series Inverter Grade Thyristors (Hockey PUK Version), 370 A Vishay High Power Products Fig. 15 - Frequency Characteristics Fig. 16 - Maximum On-State Energy Power Loss Characteristics Fig. 17 - Gate Characteristics 10 100 1000 10 000 100 1000 10 000 Pulse Basewidth (µs) 10 Snubber circuit R s = 47 Ω C s = 0.22 µF V D = 80 % VDRM ST203C..C Series Trapezoidal pulse T C = 40 °C dI/dt = 100 A/µs t p 50 Hz 100 500 400 1000 1500 2500 3000 5000 10 000 200 10 100 1000 10 000 100 1000 10 000 Pulse Basewidth (µs) 10 Snubber circuit R s = 47 Ω C s = 0.22 µF V D = 80 % VDRM ST203C..C Series Trapezoidal pulse T C = 55 °C dI/dt = 100 A/µs t p 50 Hz 100 500 400 1000 1500 2500 3000 5000 10 000 200 Pulse Basewidth (µs) 10 100 1000 10 000 10 100 1000 10 000 100 000 t p ST203C..C Series Sinusoidal pulse 0.1 0.2 0.5 2 4 1 10 20 joules per pulse 0.3 Pulse Basewidth (µs) 10 100 1000 10 000 10 100 1000 10 000 100 000 0.1 0.2 0.5 2 3 1 5 10 20 joules per pulse 0.3 ST203C..C Series Rectangular pulse dI/dt = 50 A/µs t p 0.1 1 10 100 0.001 Instantaneous Gate Current (A) 0.01 0.1 1 10 100 V GD I GD (1) (b) (2) (3) Device: ST203C..C Series (4) Frequency limited by P G(AV) (1) P GM = 10 W, tp = 20 ms (2) P GM = 20 W, tp = 10 ms (3) P GM = 40 W, tp = 5 ms (4) P GM = 60 W, tp = 3.3 ms Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 10 Ω; t r ≤ 1 µs b) Recommended load line for ≤ 30 % rated dI/dt: 10 V, 10 Ω t r ≤ 1 µs (a) |
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