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TSHG8200 Fiches technique(PDF) 2 Page - Vishay Siliconix

No de pièce TSHG8200
Description  High Speed Infrared Emitting Diode, RoHS Compliant, 830 nm, GaAlAs Double Hetero
Download  5 Pages
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Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

TSHG8200 Fiches technique(HTML) 2 Page - Vishay Siliconix

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For technical questions, contact: emittertechsupport@vishay.com
Document Number: 84755
208
Rev. 1.1, 04-Sep-08
TSHG8200
Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS
Compliant, 830 nm, GaAlAs Double Hetero
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
Note
Tamb = 25 °C, unless otherwise specified
0
20
40
60
80
100
120
140
160
180
200
010
20
30
40
50
60
70
80
90 100
21142
T
amb - Ambient Temperature (°C)
R
thJA = 230 K/W
0
20
40
60
80
100
120
0
10
203040
506070
80
90 100
T
amb - Ambient Temperature (°C)
21143
R
thJA = 230 K/W
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Forward voltage
IF = 100 mA, tp = 20 ms
VF
1.5
1.8
V
IF = 1 A, tp = 100 µs
VF
2.3
V
Temperature coefficient of VF
IF = 1 mA
TKVF
- 1.8
mV/K
Reverse current
VR = 5 V
IR
10
µA
Junction capacitance
VR = 0 V, f = 1 MHz, E = 0
Cj
125
pF
Radiant intensity
IF = 100 mA, tp = 20 ms
Ie
120
180
360
mW/sr
IF = 1 A, tp = 100 µs
Ie
1600
mW/sr
Radiant power
IF = 100 mA, tp = 20 ms
φ
e
50
mW
Temperature coefficient of
φ
e
IF = 100 mA
TK
φ
e
- 0.35
%/K
Angle of half intensity
ϕ
± 10
deg
Peak wavelength
IF = 100 mA
λ
p
830
nm
Spectral bandwidth
IF = 100 mA
Δλ
40
nm
Temperature coefficient of
λ
p
IF = 100 mA
TK
λ
p
0.25
nm/K
Rise time
IF = 100 mA
tr
20
ns
Fall time
IF = 100 mA
tf
13
ns
Cut-off frequency
IDC = 70 mA, IAC = 30 mA pp
fc
18
MHz
Virtual source diameter
d
3.7
mm


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