TSHA6201 datasheet(2/6 Pages) VISHAY

No de pièce	TSHA6201

Description	Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs

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Fabricant	VISHAY [Vishay Siliconix]

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Document Number: 81021

162

Rev. 1.6, 05-Sep-08

TSHA6200, TSHA6201, TSHA6202, TSHA6203

Vishay Semiconductors

Infrared Emitting Diode, RoHS Compliant,

875 nm, GaAlAs

Note

Tamb = 25 °C, unless otherwise specified

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature

Fig. 2 - Forward Current Limit vs. Ambient Temperature

Note

Tamb = 25 °C, unless otherwise specified

Junction temperature

Tj

100

°C

Operating temperature range

Tamb

- 40 to + 85

°C

Storage temperature range

Tstg

- 40 to + 100

°C

Soldering temperature

t

≤ 5 s, 2 mm from case

Tsd

260

°C

Thermal resistance junction/ambient

J-STD-051, leads 7 mm, soldered on PCB

RthJA

230

K/W

ABSOLUTE MAXIMUM RATINGS

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

0

20

40

60

80

100

120

140

160

180

200

010

20

30

40

50

60

70

80

90 100

21142

T

amb - Ambient Temperature (°C)

R

thJA = 230 K/W

0

20

40

60

80

100

120

0

10

203040

506070

80

90 100

T

amb - Ambient Temperature (°C)

21143

R

thJA = 230 K/W

BASIC CHARACTERISTICS

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

IF = 100 mA, tp = 20 ms

VF

1.5

1.8

V

Temperature coefficient of VF

IF = 100 mA

TKVF

- 1.6

mV/K

Reverse current

VR = 5 V

IR

100

µA

Junction capacitance

VR = 0 V, f = 1 MHz, E = 0

Cj

20

pF

Temperature coefficient of

φ

e

IF = 20 mA

TK

φ

e

- 0.7

%/K

Angle of half intensity

ϕ

± 12

deg

Peak wavelength

IF = 100 mA

λ

p

875

nm

Spectral bandwidth

IF = 100 mA

Δλ

80

nm

Temperature coefficient of

λ

p

IF = 100 mA

TK

λ

p

0.2

nm/K

Rise time

IF = 100 mA

tr

600

ns

IF = 1.5 A

tr

300

ns

Fall time

IF = 100 mA

tf

600

ns

IF = 1.5 A

tf

300

ns

Virtual source diameter

d

3.7

mm

Numéro de pièce similaire - TSHA6201

Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	TSHA6201	87Kb / 6P	GaAlAs Infrared Emitting Diodes in ø 5 mm (T–13/4) Package Rev. 2, 20-May-99
	TSHA6201	115Kb / 6P	Infrared Emitting Diode, 875 nm, GaAlAs Rev. 1.8, 25-Jun-09
	TSHA6201	109Kb / 6P	Infrared Emitting Diode, 875 nm, GaAlAs Rev. 1.9, 24-Aug-11
	TSHA6201	108Kb / 6P	Infrared Emitting Diode, 875 nm, GaAlAs 01-Jan-2022
	TSHA6201	107Kb / 6P	Infrared Emitting Diode, 875 nm, GaAlAs 01-Jan-2023

More results

Description similaire - TSHA6201

Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	TSHA6500	114Kb / 6P	Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs Rev. 1.7, 05-Sep-08
	TSHA4400	106Kb / 5P	Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs Rev. 1.6, 16-Sep-08
	TSTA7500	139Kb / 5P	Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs 01-Jan-2023
	TSTA7500	147Kb / 5P	Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs Rev. 1.7, 04-Sep-08
	TSTA7300	151Kb / 5P	Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs Rev. 1.7, 04-Sep-08
	TSHA5200	122Kb / 6P	Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs Rev. 1.7, 05-Sep-08
	TSHA5500	114Kb / 6P	Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs Rev. 1.5, 05-Sep-08
	TSTA7100	150Kb / 5P	Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs Rev. 1.7, 04-Sep-08
	TSTA7300	143Kb / 5P	Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs 01-Jan-2023
	TSTA7300	144Kb / 5P	Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs 01-Jan-2022

More results

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