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TSFF5410 Fiches technique(PDF) 1 Page - Vishay Siliconix |
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TSFF5410 Fiches technique(HTML) 1 Page - Vishay Siliconix |
1 / 5 page Document Number: 81091 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com Rev. 1.6, 21-Jul-08 135 High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero TSFF5410 Vishay Semiconductors DESCRIPTION TSFF5410 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): ∅ 5 • Leads with stand-off • Peak wavelength: λ p = 870 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 22° • Low forward voltage • Suitable for high pulse current operation • High modulation bandwidth: fc = 24 MHz • Good spectral matching to Si photodetectors • Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC APPLICATIONS • Infrared video data transmission between camcorder and TV set • Free air data transmission systems with high modulation frequencies or high data transmission rate requirements Note Test conditions see table “Basic Characteristics” Note MOQ: minimum order quantity 94 8390 PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λ P (nm) tr (ns) TSFF5410 70 ± 22 870 15 ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSFF5410 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 5V Forward current IF 100 mA Peak forward current tp/T = 0.5, tp = 100 µs IFM 200 mA Surge forward current tp = 100 µs IFSM 1A Power dissipation PV 180 mW |
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