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TSFF5410 Fiches technique(PDF) 1 Page - Vishay Siliconix

No de pièce TSFF5410
Description  High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero
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Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

TSFF5410 Fiches technique(HTML) 1 Page - Vishay Siliconix

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Document Number: 81091
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
Rev. 1.6, 21-Jul-08
135
High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm,
GaAlAs Double Hetero
TSFF5410
Vishay Semiconductors
DESCRIPTION
TSFF5410 is an infrared, 870 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a clear, untinted plastic package.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm):
∅ 5
• Leads with stand-off
• Peak wavelength:
λ
p = 870 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity:
ϕ = ± 22°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 24 MHz
• Good spectral matching to Si photodetectors
• Lead
(Pb)-free
component
in
accordance
with
RoHS 2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
• Infrared video data transmission between camcorder and
TV set
• Free air data transmission systems with high modulation
frequencies or high data transmission rate requirements
Note
Test conditions see table “Basic Characteristics”
Note
MOQ: minimum order quantity
94 8390
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (deg)
λ
P (nm)
tr (ns)
TSFF5410
70
± 22
870
15
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
TSFF5410
Bulk
MOQ: 4000 pcs, 4000 pcs/bulk
T-1¾
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Reverse voltage
VR
5V
Forward current
IF
100
mA
Peak forward current
tp/T = 0.5, tp = 100 µs
IFM
200
mA
Surge forward current
tp = 100 µs
IFSM
1A
Power dissipation
PV
180
mW


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