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TSDF52830YS Fiches technique(PDF) 3 Page - Vishay Siliconix |
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TSDF52830YS Fiches technique(HTML) 3 Page - Vishay Siliconix |
3 / 8 page TSDF52830YS Document Number 85178 Rev. 1.2, 05-Sep-08 Vishay Semiconductors www.vishay.com 3 Electrical DC Characteristics Tamb = 25 °C, unless otherwise specified Amplifier 1 Following data are valid for operating amplifier 1 (pin 1, 3, 5, 2) which is optimized for UHF applications Amplifier 2 Following data are valid for operating amplifier 2 (pin 6, 4, 5, 2) which is optimized for VHF applications Parameter Test condition Symbol Min Typ. Max Unit Drain - source breakdown voltage ID = 10 μA, VG2S = VG1S = 0 V(BR)DSS 15 V Gate 1 - source breakdown voltage + IG1S = 10 mA, VG2S = VDS = 0 + V(BR)G1SS 710 V ± IG2S = 10 mA, VG1S = VDS = 0 ± V(BR)G2SS 710 V Gate 1 - source leakage current + VG1S = 5 V, VG2S = VDS = 0 + IG1SS 20 nA Gate 2 - source leakage current ± VG2S = 5 V, VG1S = VDS = 0 ± IG2SS 20 nA Drain - source operating current VDS = VRG1 = 5 V, VG2S = 4 V, RG1 = 100 kΩ IDSO 812 17 mA Gate 1 - source cut-off voltage VDS = 5 V, VG2S = 4, ID = 20 μA VG1S(OFF) 0.3 1.0 V Gate 2 - source cut-off voltage VDS = VRG1 = 5 V, RG1 =100 kΩ, ID = 20 μA VG2S(OFF) 0.3 1.2 V Parameter Test condition Symbol Min Typ. Max Unit Gate 1 - source breakdown voltage + IG1S = 10 mA, VG2S = VDS = 0 + V(BR)G1SS 710 V Gate 2 - source breakdown voltage ± IG2S = 10 mA, VG1S = VDS = 0 ± V(BR)G2SS 710 V Gate 1 - source leakage current + VG1S = 5 V, VG2S = VDS = 0 + IG1SS 50 μA Gate 2 - source leakage current ± VG2S = 5 V, VG1S = VDS = 0 ± IG2SS 20 nA Drain - source operating current VDS = VRG1 = 5 V, VG2S = 4 V, Gate 1 = nc IDSP 813 17 mA Gate 2 - source cut-off voltage VDS = VRG1 = 5 V, Gate 1 = nc, ID = 20 μA VG2S(OFF) 0.3 1.2 V |
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