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SI5856DC-T1 Fiches technique(PDF) 2 Page - Vishay Siliconix

No de pièce SI5856DC-T1
Description  N-Channel 1.8-V (G-S) MOSFET With Schottky Diode
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Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI5856DC-T1 Fiches technique(HTML) 2 Page - Vishay Siliconix

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Si5856DC
Vishay Siliconix
www.vishay.com
2
Document Number: 72234
S-50366—Rev. C, 28-Feb-05
THERMAL RESISTANCE RATINGS
Parameter
Device
Symbol
Typical
Maximum
Unit
t
5
MOSFET
50
60
Jti
t A bi ta
t v 5 sec
Schottky
R
54
65
Junction-to-Ambienta
St d St t
MOSFET
RthJA
90
110
_C/W
Steady State
Schottky
95
115
_C/W
Junction to Foot
Steady State
MOSFET
R
30
40
Junction-to-Foot
Steady State
Schottky
RthJF
30
40
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 mA
0.4
1.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "8 V
"100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
1
mA
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V, TJ = 85_C
5
mA
On-State Drain Currenta
ID(on)
VDS w 5 V, VGS = 4.5 V
20
A
VGS = 4.5 V, ID = 4.4 A
0.032
0.040
Drain-Source On-State Resistancea
rDS(on)
VGS = 2.5 V, ID = 4.1 A
0.036
0.045
W
Drain Source On State Resistance
rDS(on)
VGS = 1.8 V, ID = 1.9 A
0.042
0.052
W
Forward Transconductancea
gfs
VDS = 10 V, ID = 4.4 A
22
S
Diode Forward Voltagea
VSD
IS = 1.0 A, VGS = 0 V
0.8
1.2
V
Dynamicb
Total Gate Charge
Qg
5
7.5
Gate-Source Charge
Qgs
VDS = 10 V, VGS = 4.5 V, ID = 4.4 A
0.85
nC
Gate-Drain Charge
Qgd
DS
, GS
, D
1
Turn-On Delay Time
td(on)
20
30
Rise Time
tr
VDD = 10 V, RL = 10 W
36
55
Turn-Off Delay Time
td(off)
VDD = 10 V, RL = 10 W
ID ^ 1 A, VGEN = 4.5 V, RG = 6 W
30
45
ns
Fall Time
tf
12
20
ns
Source-Drain Reverse Recovery Time
trr
IF = 0.9 A, di/dt = 100 A/ms
45
90
Notes
a.
Pulse test; pulse width v 300 ms, duty cycle v 2%,
b.
Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Forward Voltage Drop
VF
IF = 1.0
0.34
0.375
V
Forward Voltage Drop
VF
IF = 1.0, TJ = 125_C
0.255
0.290
V
Vr = 20 V
0.05
0.500
Maximum Reverse Leakage Current
Irm
Vr = 20 V, TJ = 85_C
2
20
mA
Maximum Reverse Leakage Current
Irm
Vr = 20 V, TJ = 125_C
10
100
mA
Junction Capacitance
CT
Vr = 10 V
90
pF


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