Si5509DC

Vishay Siliconix

New Product

Document Number: 73629

S–60417—Rev. A, 20-Mar-06

www.vishay.com

3

Parameter

Unit

Max

Min

Test Condition

Symbol

Turn On Delay Time

N-Ch

6

9

Turn-On Delay Time

N Channel

NCh

P-Ch

8

12

Rise Time

t

N-Channel

N-Ch

95

143

Rise Time

NCh

P-Ch

75

113

ns

Turn Off Delay Time

g

P-Channel

N-Ch

12

18

ns

Turn-Off Delay Time

P Channel

NCh

P-Ch

25

38

Fall Time

N-Ch

6

9

Fall Time

NCh

P-Ch

60

90

Drain-Source Body Diode Characteristics

Continuous Source Drain Diode Current

N-Ch

3.75

Continuous Source-Drain Diode Current

P-Ch

–3.75

A

N-Ch

10

A

P-Ch

–15

Body Diode Voltage

N-Ch

0.8

1.2

V

Body Diode Voltage

P-Ch

–0.8

–1.2

V

Body Diode Reverse Recovery Time

t

N-Ch

12

18

ns

Body Diode Reverse Recovery Time

P-Ch

18

27

ns

Body Diode Reverse Recovery Charge

Q

N-Channel

N-Ch

5

8

nC

Body Diode Reverse Recovery Charge

N-Channel

P-Ch

8

12

nC

Reverse Recovery Fall Time

t

P-Channel

N-Ch

7.5

Reverse Recovery Fall Time

P Channel

P-Ch

14

ns

Reverse Recovery Rise Time

N-Ch

4.5

ns

Reverse Recovery Rise Time

P-Ch

4

Notes

a.

Guaranteed by design, not subject to production testing.

b.

Pulse test; pulse width

v 300 ms, duty cycle v 2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating

conditions for extended periods may affect device reliability.