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SI5424DC-T1-E3 Fiches technique(PDF) 4 Page - Vishay Siliconix |
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SI5424DC-T1-E3 Fiches technique(HTML) 4 Page - Vishay Siliconix |
4 / 7 page Si5424DC Vishay Siliconix New Product www.vishay.com 4 Document Number: 73776 S–60216—Rev. A, 20-Feb-06 TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) 10 ms 100 ms dc 1 s 10 s 1 ms 0.001 0.00 0.01 0.02 0.03 0.04 0.05 0.06 02468 10 ID = 4.8 A On-Resistance vs. Gate-to-Source Voltage VGS – Gate-to-Source Voltage (V) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 –50 –25 0 25 50 75 100 125 150 ID = 250 mA Threshold Voltage TJ – Temperature (_C) Safe Operating Area, Junction-to-Ambient 100 1 0.1 1 100 0.01 10 0.1 VDS – Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified TA = 25 _C TA = 125 _C 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.001 Source-Drain Diode Forward Voltage VSD – Source-to-Drain Voltage (V) 0.1 0.01 1 10 20 TA = 150 _C TA = 25 _C 0 30 50 10 20 Single Pulse Power Time (sec) 40 1 100 600 10 10–1 10–2 10–3 TA = 25 _C Single Pulse BVDSS Limited *Limited by rDS(on) |
Numéro de pièce similaire - SI5424DC-T1-E3 |
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Description similaire - SI5424DC-T1-E3 |
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