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SI3865BDV Fiches technique(PDF) 1 Page - Vishay Siliconix |
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SI3865BDV Fiches technique(HTML) 1 Page - Vishay Siliconix |
1 / 6 page 1.8-V Rated Si3865BDV Vishay Siliconix New Product Document Number: 72848 S-41170—Rev. B, 14-Jun-04 www.vishay.com 1 Load Switch with Level-Shift PRODUCT SUMMARY VDS2 (V) rDS(on) (W) ID (A) 0.060 @ VIN = 4.5 V 2.9 1.8 to 8 0.100 @ VIN = 2.5 V 2.2 0.175 @ VIN = 1.8 V 1.7 FEATURES D 60-mW Low rDS(on) TrenchFETr D 1.8 to 8-V Input D 1.5 to 8-V Logic Level Control D Low Profile, Small Footprint TSOP-6 Package D 3000-V ESD Protection On Input Switch, VON/OFF D Adjustable Slew-Rate DESCRIPTION The Si3865BDV includes a p- and n-channel MOSFET in a single TSOP-6 package. The low on-resistance p-channel TrenchFETR is tailored for use as a load switch. The n-channel, with an external resistor, can be used as a level-shift to drive the p-channel load-switch. The n-channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5-V. The Si3865BDV operates on supply lines from 1.8 to 8-V, and can drive loads up to 2.9 A. APPLICATION CIRCUITS Switching Variation R2 @ VIN = 2.5 V, R1 = 20 kW 0 8 16 24 32 40 02468 R2 (kW) IL = 1 A VON/OFF = 3 V Ci = 10 mF Co = 1 mF tr td(on) td(off) tf Note: For R2 switching variations with other VIN/R1 combinations See Typical Characteristics VOUT GND LOAD VIN ON/OFF R2 R2 1 2, 3 C1 6 4 6 5 R1 Q1 Q2 Si3865BDV Co Ci COMPONENTS R1 Pull-Up Resistor Typical 10 kW to 1 mW* R2 Optional Slew-Rate Control Typical 0 to 100 kW* C1 Optional Slew-Rate Control Typical 1000 pF *Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on. The Si3865BDV is ideally suited for high-side load switching in portable applications. The integrated n-channel level-shift device saves space by reducing external components. The slew rate is set externally so that rise-times can be tailored to different load types. |
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