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SI3495DV Fiches technique(PDF) 4 Page - Vishay Siliconix |
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SI3495DV Fiches technique(HTML) 4 Page - Vishay Siliconix |
4 / 6 page www.vishay.com 4 Document Number: 73135 S-71321-Rev. B, 02-Jul-07 Vishay Siliconix Si3495DV New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Threshold Voltage - 0.2 - 0.1 0.0 0.1 0.2 0.3 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) Single Pulse Power 0 24 40 8 16 Time (sec) 32 1 100 600 10 10- 1 10- 2 TA = 25 °C Safe Operating Area 100 1 0.1 1 10 100 0.01 10 0.1 TC = 25 °C Single Pulse *rDS(on) Limited BVDSS Limited ID(on) Limited P(t) = 10 dc P(t) = 1 P(t) = 0.1 P(t) = 0.01 P(t) = 0.001 VDS - Drain-to-Source Voltage (V) *VGS minimum VGS at which rDS(on) is specified IDM Limited > Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-3 1 10 600 10-1 10-4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (sec) 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 360 °C/W 3. T JM - TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM |
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