SI2309DS datasheet(1/5 Pages) VISHAY

No de pièce	SI2309DS

Description	P-Channel 60-V (D-S) MOSFET

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Vishay Siliconix

Si2309DS

Document Number: 70835

S-72216-Rev. C, 22-Oct-07

www.vishay.com

1

P-Channel 60-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (Ω)ID (A)

- 60

0.340 at VGS = - 10 V

- 1.25

0.550 at VGS = - 4.5 V

- 1

G

TO-236

(SOT-23)

S

D

Top View

2

3

1

Si2309DS (A9)*

* Marking Code

Ordering Information: Si2309DS-T1

Si2309DS-T1-E3 (Lead (Pb)-free)

Notes:

a. Surface Mounted on FR4 Board.

b. t

≤ 5 s.

* Pb containing terminations are not RoHS compliant, exemptions may apply.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

- 60

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

a, b

TA = 25 °C

ID

- 1.25

A

TA = 70 °C

- 0.85

Pulsed Drain Current

IDM

- 8

Avalanche Current

L = 0.1 mH

IAS

- 5

Maximum Power Dissipationa, b

TA = 25 °C

PD

1.25

W

TA = 70 °C

0.8

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta

t

≤ 5 s

RthJA

100

°C/W

Steady State

130

166

Maximum Junction-to-Leada

Steady State

RthJL

45

60

Available

Pb-free

RoHS*

COMPLIANT

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