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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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SI1035X-T1-E3 Fiches technique(PDF) 1 Page - Vishay Siliconix |
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SI1035X-T1-E3 Fiches technique(HTML) 1 Page - Vishay Siliconix |
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1 / 8 page  Vishay Siliconix Si1035X Document Number: 71426 S-80643-Rev. B, 24-Mar-08 www.vishay.com 1 Complementary N- and P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET: 1.5 V Rated • Very Small Footprint • High-Side Switching • Low On-Resistance: N-Channel, 5 Ω P-Channel, 8 Ω • Low Threshold: ± 0.9 V (typ.) • Fast Switching Speed: 45 ns (typ.) • 1.5 V Operation • Gate-Source ESD Protected: 2000 V BENEFITS • Ease in Driving Switches • Low Offset (Error) Voltage • Low-Voltage Operation • High-Speed Circuits • Low Battery Voltage Operation APPLICATIONS • Replace Digital Transistor, Level-Shifter • Battery Operated Systems • Power Supply Converter Circuits • Load/Power Switching Cell Phones, Pagers PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (mA) N-Channel 20 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 P-Channel - 20 8 at VGS = - 4.5 V - 150 12 at VGS = - 2.5 V - 125 15 at VGS = - 1.8 V - 100 20 at VGS = - 1.5 V - 30 Marking Code: M Top View 3 1 D2 G2 S1 5 2 4 6 D1 S2 G1 SC-89 Ordering Information: Si1035X-T1-E3 (Lead (Pb)-free) Si1035X-T1-GE3 (Lead (Pb)-free and Halogen-free) Notes: a. Surface Mounted on FR4 board. b. Pulse width limited by maximum junction temperature. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Unit 5 s Steady State 5 s Steady State Drain-Source Voltage VDS 20 - 20 V Gate-Source Voltage VGS ± 5 Continuous Drain Current (TJ = 150 °C) a TA = 25 °C ID 190 180 - 155 - 145 mA TA = 85 °C 140 130 - 110 - 105 Pulsed Drain Currentb IDM 650 - 650 Continuous Source Current (Diode Conduction) IS 450 380 - 450 - 380 Maximum Power Dissipationa TA = 25 °C PD 280 250 280 250 mW TA = 85 °C 145 130 145 130 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V RoHS COMPLIANT |
Numéro de pièce similaire - SI1035X-T1-E3 |
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Description similaire - SI1035X-T1-E3 |
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