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SI1026X-T1-E3 Fiches technique(PDF) 2 Page - Vishay Siliconix |
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SI1026X-T1-E3 Fiches technique(HTML) 2 Page - Vishay Siliconix |
2 / 5 page www.vishay.com 2 Document Number: 71434 S-80643-Rev. C, 24-Mar-08 Vishay Siliconix Si1026X Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. For DESIGN AID ONLY,, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 10 µA 60 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 0.25 mA 1 2.5 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 10 V ± 150 nA VDS = 0 V, VGS = ± 5 V ± 50 Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 1 µA VDS = 60 V, VGS = 0 V, TJ = 85 °C 10 On-State Drain Currenta ID(on) VDS = 10 V, VGS = 4.5 V 500 mA VDS = 7.5 V, VGS = 10 V 800 Drain-Source On-Resistancea RDS(on) VGS = 4.5 V, ID = 200 mA 3.0 Ω VGS = 10 V, ID = 500 mA 1.40 VGS = 10 V, ID = 500 mA, TJ = 125 °C 2.50 Forward Transconductancea gfs VDS = 10 V, ID = 200 mA 200 mS Diode Forward Voltagea VSD VGS = 0 V, IS = 200 mA 1.40 V Dynamicb Total Gate Charge Qg VDS = 10 V, ID = 250 mA, VGS = 4.5 V 600 pC Gate-Source Charge Qgs 120 Gate-Drain Charge Qgd 225 Input Capacitance Ciss VDS = 25 V, VGS = 0 V, f = 1 MHz 30 pF Output Capacitance Coss 6 Reverse Transfer Capacitance Crss 3 Switchingb, c Turn-On Time t(on) VDD = 30 V, RL = 150 Ω ID = 200 mA, VGEN = 10 V, RG = 10 Ω 15 ns Turn-Off Time t(off) 20 |
Numéro de pièce similaire - SI1026X-T1-E3 |
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Description similaire - SI1026X-T1-E3 |
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