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IRLR120TRL Fiches technique(PDF) 1 Page - Vishay Siliconix |
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IRLR120TRL Fiches technique(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 91324 www.vishay.com S-81292-Rev. A, 16-Jun-08 1 Power MOSFET IRLR120, IRLU120, SiHLR120, SiHLU120 Vishay Siliconix FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRLR120/SiHLR120) • Straight Lead (IRLU120/SiHLU120) • Available in Tape and Reel • Logic-Level Gate Drive •RDS(on) Specified at VGS = 4 V and 5 V • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRLU/SiHLU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. Note a. See device orientation. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 5.3 mH, RG = 25 Ω, IAS = 7.7 A (see fig. 12). c. ISD ≤ 9.2 A, dI/dt ≤ 110 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω)VGS = 5.0 V 0.27 Qg (Max.) (nC) 12 Qgs (nC) 3.0 Qgd (nC) 7.1 Configuration Single N-Channel MOSFET G D S DPAK (TO-252) IPAK (TO-251) Available RoHS* COMPLIANT ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) Lead (Pb)-free IRLR120PbF IRLR120TRLPbFa IRLR120TRPbFa IRLR120TRRPbFa IRLU120PbF SiHLR120-E3 SiHLR120TL-E3a SiHLR120T-E3a SiHLR120TR-E3a SiHLU120-E3 SnPb IRLR120 IRLR120TRLa IRLR120TRa -- SiHLR120 SiHLR120TLa SiHLR120Ta -- ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ± 10 Continuous Drain Current VGS at 5.0 V TC = 25 °C ID 7.7 A TC = 100 °C 4.9 Pulsed Drain Currenta IDM 31 Linear Derating Factor 0.33 W/°C Linear Derating Factor (PCB Mount)e 0.020 Single Pulse Avalanche Energyb EAS 210 mJ Repetitive Avalanche Currenta IAR 7.7 A Repetitive Avalanche Energya EAR 4.2 mJ Maximum Power Dissipation TC = 25 °C PD 42 W Maximum Power Dissipation (PCB Mount)e TA = 25 °C 2.5 Peak Diode Recovery dV/dtc dV/dt 5.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 260d * Pb containing terminations are not RoHS compliant, exemptions may apply |
Numéro de pièce similaire - IRLR120TRL |
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Description similaire - IRLR120TRL |
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